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TK14E65W,S1X

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TK14E65W,S1X

Transistor Polarity : N-Channel

Id - Continuous Drain Current : 13.7 A

Mounting Style : Through Hole

Minimum Operating Temperature : - 55 C

Package / Case : TO-220-3

Maximum Operating Temperature : + 150 C

Channel Mode : Enhancement

Vds - Drain-Source Breakdown Voltage : 650 V

Technology : Si

Vgs th - Gate-Source Threshold Voltage : 2.5 V to 3.5 V

Product Category : MOSFET

Rds On - Drain-Source Resistance : 220 mOhms

Number of Channels : 1 Channel

Vgs - Gate-Source Voltage : 30 V

Qg - Gate Charge : 35 nC

Manufacturer : Toshiba

Description : MOSFET MOSFET NChannel 0.22ohm DTMOS

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The TK14E65W,S1X,from Toshiba,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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