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Product Category : MOSFET
Vgs (Max) : ±20V
Current - Continuous Drain (Id) @ 25°C : 80A (Tc)
FET Type : N-Channel
Mounting Type : Surface Mount
Gate Charge (Qg) (Max) @ Vgs : 170nC @ 10V
Manufacturer : Infineon Technologies
Minimum Quantity : 1000
Drive Voltage (Max Rds On, Min Rds On) : 10V
Operating Temperature : -55°C ~ 175°C (TJ)
FET Feature : -
Series : OptiMOS™
Input Capacitance (Ciss) (Max) @ Vds : 5110pF @ 25V
Supplier Device Package : PG-TO263-3-2
Part Status : Obsolete
Packaging : Tape & Reel (TR)
Rds On (Max) @ Id, Vgs : 4.8 mOhm @ 80A, 10V
Power Dissipation (Max) : 300W (Tc)
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology : MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id : 4V @ 250µA
Drain to Source Voltage (Vdss) : 55V
Description : MOSFET N-CH 55V 80A TO263-3
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