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IRF6711STR1PBF

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Shenzhen Century Tongxin Electronics Co., Ltd

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IRF6711STR1PBF

Product Category : MOSFET

Vgs (Max) : ±20V

Current - Continuous Drain (Id) @ 25°C : 19A (Ta), 84A (Tc)

FET Type : N-Channel

Mounting Type : Surface Mount

Gate Charge (Qg) (Max) @ Vgs : 20nC @ 4.5V

Manufacturer : Infineon Technologies

Minimum Quantity : 1000

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Operating Temperature : -40°C ~ 150°C (TJ)

FET Feature : -

Series : HEXFET®

Input Capacitance (Ciss) (Max) @ Vds : 1810pF @ 13V

Supplier Device Package : DIRECTFET™ SQ

Part Status : Obsolete

Packaging : Tape & Reel (TR)

Rds On (Max) @ Id, Vgs : 3.8 mOhm @ 19A, 10V

Power Dissipation (Max) : 2.2W (Ta), 42W (Tc)

Package / Case : DirectFET™ Isometric SQ

Technology : MOSFET (Metal Oxide)

Vgs(th) (Max) @ Id : 2.35V @ 25µA

Drain to Source Voltage (Vdss) : 25V

Description : MOSFET N-CH 25V 19A DIRECTFET-SQ

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The IRF6711STR1PBF,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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