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IPP80N03S4L03AKSA1

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Shenzhen Century Tongxin Electronics Co., Ltd

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IPP80N03S4L03AKSA1

Transistor Polarity : N-Channel

Technology : Si

Id - Continuous Drain Current : 80 A

Mounting Style : Through Hole

Minimum Operating Temperature : - 55 C

Package / Case : TO-220-3

Maximum Operating Temperature : + 175 C

Channel Mode : Enhancement

Vds - Drain-Source Breakdown Voltage : 30 V

Packaging : Tube

Vgs th - Gate-Source Threshold Voltage : 1 V

Product Category : MOSFET

Rds On - Drain-Source Resistance : 2.3 mOhms

Number of Channels : 1 Channel

Vgs - Gate-Source Voltage : 16 V

Qg - Gate Charge : 140 nC

Manufacturer : Infineon Technologies

Description : MOSFET N-Ch 30V 80A TO220-3 OptiMOS-T2

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The IPP80N03S4L03AKSA1,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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