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EMF8T2R

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Shenzhen Century Tongxin Electronics Co., Ltd

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EMF8T2R

Category : Discrete Semiconductor Products Transistors Bipolar (BJT) Bipolar Transistor Arrays, Pre-Biased

Current - Collector (Ic) (Max) : 100mA, 500mA

Product Status : Not For New Designs

Transistor Type : 1 NPN Pre-Biased, 1 NPN

Frequency - Transition : 250MHz, 320MHz

Mounting Type : Surface Mount

Package : Tape & Reel (TR)

Series : -

Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA

Voltage - Collector Emitter Breakdown (Max) : 50V, 12V

Supplier Device Package : EMT6

Resistor - Base (R1) : 47kOhms

Mfr : Rohm Semiconductor

Resistor - Emitter Base (R2) : 47kOhms

Current - Collector Cutoff (Max) : 500nA

Power - Max : 150mW

Package / Case : SOT-563, SOT-666

DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V / 270 @ 10mA, 2V

Base Product Number : EMF8T2

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Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 NPN 50V, 12V 100mA, 500mA 250MHz, 320MHz 150mW Surface Mount EMT6

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