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MT3S111TU,LF

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Shenzhen Century Tongxin Electronics Co., Ltd

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MT3S111TU,LF

Category : Discrete Semiconductor Products Transistors Bipolar (BJT) Bipolar RF Transistors

Current - Collector (Ic) (Max) : 100mA

Product Status : Active

Transistor Type : NPN

Mounting Type : Surface Mount

Frequency - Transition : 10GHz

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Series : -

Voltage - Collector Emitter Breakdown (Max) : 6V

Supplier Device Package : UFM

Mfr : Toshiba Semiconductor and Storage

Noise Figure (dB Typ @ f) : 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz

Power - Max : 800mW

Gain : 12.5dB

Package / Case : 3-SMD, Flat Lead

Operating Temperature : 150°C (TJ)

DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 30mA, 5V

Base Product Number : MT3S111

Description : RF SIGE NPN BIPOLAR TRANSISTOR N

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RF Transistor NPN 6V 100mA 10GHz 800mW Surface Mount UFM

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