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Gate-Emitter Leakage Current : 600 nA
Product Category : IGBT Transistors
Mounting Style : Through Hole
Continuous Collector Current at 25 C : 100 A
Pd - Power Dissipation : 375 W
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-247-3
Maximum Operating Temperature : + 150 C
Maximum Gate Emitter Voltage : 5.8 V
Packaging : Tube
Configuration : Single
Collector-Emitter Saturation Voltage : 2.3 V
Manufacturer : Infineon Technologies
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