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GT30J121(Q)

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Shenzhen Century Tongxin Electronics Co., Ltd

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GT30J121(Q)

Product Category : IGBT Transistors

Mounting Style : Through Hole

Collector- Emitter Voltage VCEO Max : 600 V

Package / Case : TO-3P

Maximum Operating Temperature : + 150 C

Maximum Gate Emitter Voltage : +/- 20 V

Configuration : Single

Continuous Collector Current at 25 C : 30 A

Manufacturer : Toshiba

Description : IGBT Transistors 600V/30A DIS

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The GT30J121(Q),from Toshiba,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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