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IRGS4B60KD1PBF

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Shenzhen Century Tongxin Electronics Co., Ltd

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IRGS4B60KD1PBF

Product Category : IGBT Transistors

Mounting Style : SMD/SMT

Continuous Collector Current at 25 C : 12 A

Pd - Power Dissipation : 63 W

Collector- Emitter Voltage VCEO Max : 600 V

Package / Case : TO-263-3

Maximum Operating Temperature : + 150 C

Maximum Gate Emitter Voltage : +/- 20 V

Packaging : Tube

Configuration : Single

Collector-Emitter Saturation Voltage : 2.5 V

Manufacturer : Infineon Technologies

Description : IGBT Transistors 600V LO-VCEON NON PNCH THRU COPCK IGBT

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The IRGS4B60KD1PBF,from Infineon Technologies,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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