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STGYA120M65DF2

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Shenzhen Century Tongxin Electronics Co., Ltd

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STGYA120M65DF2

Gate-Emitter Leakage Current : +/- 250 uA

Product Category : IGBT Transistors

Mounting Style : Through Hole

Continuous Collector Current at 25 C : 160 A

Pd - Power Dissipation : 625 W

Collector- Emitter Voltage VCEO Max : 650 V

Package / Case : MAX-247-3

Maximum Operating Temperature : + 175 C

Maximum Gate Emitter Voltage : +/- 20 V

Configuration : Single

Collector-Emitter Saturation Voltage : 1.65 V

Manufacturer : STMicroelectronics

Description : IGBT Transistors Trench gate field-stop IGBT, M series 650 V, 120 A low loss

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The STGYA120M65DF2,from STMicroelectronics,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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