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IGW03N120H2

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Shenzhen Century Tongxin Electronics Co., Ltd

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IGW03N120H2

Product Category : IGBT Transistors

Mounting Style : Through Hole

Collector- Emitter Voltage VCEO Max : 1200 V

Package / Case : TO-247-3

Maximum Operating Temperature : + 150 C

Maximum Gate Emitter Voltage : +/- 20 V

Packaging : Tube

Configuration : Single

Manufacturer : Infineon Technologies

Description : IGBT Transistors HIGH SPEED 2 TECH 1200V 3A

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The IGW03N120H2,from Infineon Technologies,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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