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MIEB101H1200EH

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Shenzhen Century Tongxin Electronics Co., Ltd

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MIEB101H1200EH

Category : Discrete Semiconductor Products Transistors IGBTs IGBT Modules

Current - Collector (Ic) (Max) : 183 A

Product Status : Active

Mounting Type : Chassis Mount

Package : Box

Series : -

Package / Case : E3

Vce(on) (Max) @ Vge, Ic : 2.2V @ 15V, 100A

Voltage - Collector Emitter Breakdown (Max) : 1200 V

Supplier Device Package : E3

Mfr : IXYS

Operating Temperature : -40°C ~ 125°C (TJ)

Current - Collector Cutoff (Max) : 300 µA

IGBT Type : -

Power - Max : 630 W

Input : Standard

Input Capacitance (Cies) @ Vce : 7.43 nF @ 25 V

Configuration : Full Bridge Inverter

NTC Thermistor : No

Base Product Number : MIEB101

Description : IGBT MODULE 1200V 183A 630W E3

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IGBT Module Full Bridge Inverter 1200 V 183 A 630 W Chassis Mount E3

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