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DXT5551-13

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Transistor Polarity : NPN

Product Category : Bipolar Transistors - BJT

Maximum DC Collector Current : 600 mA

Collector- Emitter Voltage VCEO Max : 160 V

Package / Case : SOT-89-3

Maximum Operating Temperature : + 150 C

Gain Bandwidth Product fT : 300 MHz

Configuration : Single

Collector- Base Voltage VCBO : 180 V

Series : DXT5551

Emitter- Base Voltage VEBO : 6 V

Collector-Emitter Saturation Voltage : 200 mV

Manufacturer : Diodes Incorporated

Description : Bipolar Transistors - BJT 1W 160V

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The DXT5551-13,from Diodes Incorporated,is Bipolar Transistors - BJT.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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